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2T DRAM Cell with Asymmetric Parasitic Capacitors and 2T DRAM Cell Array
비대칭 기생 커패시터를 포함한 2T 디램 셀 및 2T 디램 셀 어레이

  • 10-2024-0026247 (Korea, pending)
  • Yoonyoung Chung, Suwon Seong, Dae-Hwan Kang, Sung-Woong Chung
  • AI semiconductor

Three Terminal Two Transistor DRAM Cell and Operation Method Thereof
3단자 2트랜지스터 디램 셀 구조 및 동작 방법

  • 10-2023-0194399 (Korea, pending)
  • Yoonyoung Chung, Suwon Seong, Sung Woong Chung, Dae Hwan Kang
  • AI semiconductor

Synapse Device and Method of Operating the Same

  • 18/522,109 (US, pending)
  • Yoonyoung Chung, Suwon Seong, Seongmin Park
  • AI semiconductor

Method of Measuring Multi-Interval Impedance for Precise Extraction of Electrode/Electrolyte Interface Impedance with Electrolyte Influence Removed and Measuring System Using Same
전해질 영향이 제거된 전극/전해질 계면 임피던스의 정밀 추출을 위한 다간격 임피던스 측정방법 및 측정 시스템

  • 10-2023-0074697 (Korea, pending)
  • Yoonyoung Chung, Jinpyeo Jeung
  • Wearable healthcare

Methods of Manufacturing Semiconductor Devices
반도체 장치의 제조 방법

  • 10-2022-0185319 (Korea, pending)
  • Yoonyoung Chung, Jueun Kim, Seongmin Park
  • Transistor

Synapse Device and Method of Operating the Same
시냅스 소자 및 그 구동 방법

  • 10-2022-0177321 (Korea, pending)
  • Yoonyoung Chung, Gilsu Jeon, Seyoung Kim, Seongmin Park, Suwon Seong
  • AI semiconductor

Synapse Device and Method of Operating the Same
시냅스 소자 및 그 구동 방법

  • 10-2022-0177307 (Korea, pending)
  • Yoonyoung Chung, Seyoung Kim, Seongmin Park, Suwon Seong
  • AI semiconductor

Processing Vocal Cord Signals Methods and Devices
성대 신호 처리 방법 및 디바이스

  • 10-2022-0157094 (Korea, pending)
  • Yoonyoung Chung, Young-Seok Kim, Yonghun Song, Inyeol Yun
  • Wearable healthcare

Oxide Semiconductor Layer-Electrode Junction Structure and Thin Film Transistor Including the Structure
산화물 반도체층-전극 접합 구조체 및 이 구조체를 포함하는 박막트랜지스터

  • 10-2022-0128872 (Korea, pending)
  • Yoonyoung Chung, Hyuk Park, Juyoung Yun
  • Transistor

Method for Producing Oxide Semiconductor Layer-Electrode Junction Structure and Method for Producing Varactor Including the Same
산화물 반도체막-전극 접합 구조체 제조방법 및 이를 포함하는 버랙터 제조방법

  • 10-2022-0128871 (Korea, pending)
  • Yoonyoung Chung, Hyuk Park, Juyoung Yun
  • Transistor
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