Interface Engineering for High-speed and High-resolution Electronic Devices

Team: Hyuk Park, Juyoung Yun

Oxide semiconductors are widely utilized in commercial displays, but their contact properties with metal are inferior to silicon. As the resolution of electronic devices increases, and the size is scaled down, contact resistance significantly affects the overall performance; it determines how fast the device can operate and the degree of integration. Our group develops novel methods for reducing the contact resistance with hydrogen treatment. Hydrogen can passivate the interface traps and act as an electron donor, which results in a effective lowering of the potential barrier between the semiconductor and electrode. The results can be exploited in high-frequency (> GHz) devices and high-resolution (> 3,000 ppi) active-matrix platform.