New Non-volatile Memory Technology

Team: Seongmin Park

In recent years, rapid developments in artificial intelligence, big data, and cloud computing dramatically increased the demand for high-capacity and high-speed data storage. Flash memory, based on the charge trapping effects in thin film, is most widely used storage medium in personal devices as well as cloud servers. Technical innovations, such as scaling, three-dimensional vertical stacking, and materials optimization, have continuously advanced the performance. Our research focuses on the charge-trapping layer, where the data is stored. The charge trap distributions in this layer significantly affect the endurance, retention, and capacity of the memory device. In addition, we study low-temperature ferroelectric layer fabrication for low-power and multi-level memory applications. Not only are we expecting dramatically improved storage performance, but also paving the way for the next-generation neuromorphic hardware platform.